? 2010 ixys corporation, all rights reserved xpt tm 600v genx3 tm w/ diode IXXH50N60C3D1 v ces = 600v i c110 = 50a v ce(sat) 2.30v t fi(typ) = 42ns symbol test conditions maximum ratings v ces t j = 25c to 175c 600 v v cgr t j = 25c to 175c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 100 a i c110 t c = 110c 50 a i f110 t c = 110c 30 a i cm t c = 25c, 1ms 200 a i a t c = 25c 25 a e as t c = 25c 200 mj ssoa v ge = 15v, t vj = 150c, r g = 5 i cm = 100 a (rbsoa) clamped inductive load @ v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 22 , non repetitive p c t c = 25c 600 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g ds100274(12/10) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab extreme light punch through igbt for 20-60 khz switching features z optimized for 20-60khz switching z square rbsoa z anti-parallel ultra fast diode z avalanche capability z short circuit capability z international standard package advantages z high power density z 175c rated z extremely rugged z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 25 a t j = 150 c 3 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 36a, v ge = 15v, note 1 1.95 2.30 v t j = 150 c 2.45 v advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXXH50N60C3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 36a , v ce = 10v, note 1 11 18 s c ie s 2320 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 138 pf c res 42 pf q g 64 nc q ge i c = 36a , v ge = 15v, v ce = 0.5 ? v ces 18 nc q gc 25 nc t d(on) 24 ns t ri 40 ns e on 0.72 mj t d(off) 62 100 ns t fi 42 ns e of f 0.33 0.55 mj t d(on) 25 ns t ri 44 ns e on 1.46 mj t d(off) 80 ns t fi 90 ns e off 0.48 mj r thjc 0.25 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 36a, v ge = 15v v ce = 360v, r g = 5 note 2 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ? p to-247 (ixxh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc inductive load, t j = 150c i c = 36a, v ge = 15v v ce = 360v, r g = 5 note 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 24a, v ge = 0v, note 1 2.7 v t j = 150c 1.6 v i rm t j = 100c 4 a t rr t j = 100c 100 ns 25 ns r thjc 0.9 c/w i f = 30a, v ge = 0v, -di f /dt = 100a/ s, v r = 100v i f = 1a, v ge = 0v, -di f /dt = 100a/ s, v r = 30v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2010 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 55 00.511.522.53 v ce - volts i c - amperes v ge = 15 v 14 v 13 v 10v 8v 6v 12v 9v 11v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 5 10 15 20 25 30 35 40 45 50 55 00.511.522.533.54 v ce - volts i c - amperes v ge = 15 v 14 v 13 v 10v 12v 9v 6v 11v 8v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 36a i c = 18a i c = 54a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 54 a t j = 25oc 36 a 18 a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 45678910111213 v ge - volts i c - amperes t j = 150oc 25oc - 40oc IXXH50N60C3D1
ixys reserves the right to change limits, test conditions, and dimensions. IXXH50N60C3D1 fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 12. maximum transient thermal impedance a a sss 0.4 fig. 7. transconductance 0 4 8 12 16 20 24 28 32 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc, 25oc, 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 100 200 300 400 500 600 v ce - volts i c - amperes t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 10203040506070 q g - nanocoulombs v ge - volts v ce = 300v i c = 36a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limit dc 100s
? 2010 ixys corporation, all rights reserved fig. 13. inductive switching energy loss vs. gate resistance 0.2 0.4 0.6 0.8 1.0 1.2 5 101520253035404550 r g - ohms e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 360v i c = 36a i c = 54a fig. 16. inductive turn-off switching times vs. gate resistance 50 60 70 80 90 100 110 120 5 101520253035404550 r g - ohms t f i - nanoseconds 0 50 100 150 200 250 300 350 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 36a i c = 54a fig. 14. inductive switching energy loss vs. collector current 0.1 0.2 0.3 0.4 0.5 0.6 0.7 18 22 26 30 34 38 42 46 50 54 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 360v i c = 36a i c = 54a fig. 17. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 18 22 26 30 34 38 42 46 50 54 i c - amperes t f i - nanoseconds 40 50 60 70 80 90 100 110 120 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 20 30 40 50 60 70 80 90 100 110 120 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 40 45 50 55 60 65 70 75 80 85 90 t d ( off ) - nanoseconds t f i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 360v i c = 54a i c = 36a IXXH50N60C3D1
ixys reserves the right to change limits, test conditions, and dimensions. IXXH50N60C3D1 fig. 20. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 18 22 26 30 34 38 42 46 50 54 i c - amperes t r i - nanoseconds 21 22 23 24 25 26 27 28 29 30 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 21. inductive turn-on switching times vs. junction temperature 10 30 50 70 90 110 130 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 20 22 24 26 28 30 32 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 360v i c = 54a i c = 36a fig. 19. inductive turn-on switching times vs. gate resistance 30 40 50 60 70 80 90 100 110 120 130 140 5 101520253035404550 r g - ohms t r i - nanoseconds 0 10 20 30 40 50 60 70 80 90 100 110 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 54a i c = 36a
? 2010 ixys corporation, all rights reserved IXXH50N60C3D1 ixys ref: ixx_50n60c3(5d)5-20-10 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 04080120160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06 t vj = 100c v r = 300v t vj = 100c i f = 30a q r i rm fig. 26. recovery time t rr versus -di f /dt fig. 27. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 28. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 fig. 25. dynamic parameters q r , i rm versus t vj i f = 60a i f = 30a i f = 15a fig. 24. peak reverse current i rm versus -di f /dt fig. 23. reverse recovery charge q r versus -di f /dt fig. 22. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a t vj = 25c t vj =100c t vj =150c
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